Extraction of electric field in heavily irradiated silicon pixel sensors
نویسنده
چکیده
A. Dorokhov , Y. Allkofer, C. Amsler, D. Bortoletto, V. Chiochia, L. Cremaldi, S. Cucciarelli, C. Hörmann, D. Kim , M. Konecki, D. Kotlinski, K. Prokofiev, C. Regenfus, T. Rohe, D. Sanders, S. Son, T. Speer, M. Swartz Physik Institut der Universität Zürich-Irchel, 8057 Zürich, Switzerland Paul Scherrer Institut, 5232 Villigen, Switzerland Purdue University, Task G, West Lafayette, IN 47907, USA Mississippi State Univ., Department of Physics and Astronomy, MS 39762, USA Institut für Physik der Universität Basel, 4056 Basel, Switzerland Johns Hopkins University, Baltimore, MD 21218, USA
منابع مشابه
Electric fieldmeasurement inheavily irradiatedpixel sensors
A new method for the extraction of the electric field in the bulk of heavily irradiated silicon pixel sensors is presented. It is based on the measurement of the Lorentz deflection and mobility of electrons as a function of depth. The measurements were made at the CERN H2 beam line, with the beam at a shallow angle with respect to the pixel sensor surface. The extracted electric field is used t...
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